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采用28nm UTBB FDSOI工艺通过体偏压控制具有IIP2校准的低功耗RF电感接收机前端 ... .. ...

2016-9-1 18:48| 发布者: dzk| 查看: 4680| 评论: 0

摘要: 资料简介:Low-Power Inductorless RF Receiver Front-End with IIP2 Calibration through Body Bias Control in 28nm UTBB FDSOI --- 采用28nm UTBB FDSOI工艺通过体偏压控制具有IIP2校准的低功耗RF电感接收机前端L ...

资料简介:Low-Power Inductorless RF Receiver Front-End with IIP2 Calibration through Body Bias Control in 28nm UTBB FDSOI --- 采用28nm UTBB FDSOI工艺通过体偏压控制具有IIP2校准的低功耗RF电感接收机前端

Low-Power Inductorless RF Receiver Front-End with IIP2 Calibration through Body Bias Control in 28nm UTBB FDSOI --- 采用28nm UTBB FDSOI工艺通过体偏压控制具有IIP2校准的低功耗RF电感接收机前端

A compact energy-efficient receiver front-end designed and implemented in 28nm UTBB FDSOI CMOS supports in-device coexistence of Bluetooth (BT) with an LTE FDD Band 7 transmitter module. The receiver is based on an inductorless low-IF current-mode LNTA-first architecture and features IIP2 calibration. IIP2 improvement is implemented through the body bias of the passive mixer switching pairs. The fabricated receiver has an active area of 0.12mm2, power consumption of 4.4mW, achieves IIP2 improvement of over 25dB through body bias tuning, NF of 8.6dB and gain of 26.7dB, all within BT specification.

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